Diodes Inc N-Channel MOSFET, 8.5 A, 60 V, 3-Pin DPAK DMN6068LK3-13
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8.5 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10.3 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 4.80
€ 0.192 Each (Supplied as a Tape) (Exc. VAT)
Standard
25
€ 4.80
€ 0.192 Each (Supplied as a Tape) (Exc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 25 - 100 | € 0.192 | € 4.80 |
| 125 - 600 | € 0.186 | € 4.66 |
| 625 - 1225 | € 0.182 | € 4.55 |
| 1250+ | € 0.177 | € 4.43 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8.5 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10.3 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products