Diodes Inc N-Channel MOSFET, 300 mA, 50 V, 3-Pin SOT-323 DMN5L06WK-7

RS Stock No.: 708-2434Brand: DiodesZetexManufacturers Part No.: DMN5L06WK-7
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Technical Document

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Each (In a Pack of 25) (Exc. VAT)

Diodes Inc N-Channel MOSFET, 300 mA, 50 V, 3-Pin SOT-323 DMN5L06WK-7
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Price on asking

Each (In a Pack of 25) (Exc. VAT)

Diodes Inc N-Channel MOSFET, 300 mA, 50 V, 3-Pin SOT-323 DMN5L06WK-7

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25Price on asking
50Price on asking
75Price on asking
100Price on asking
125Price on asking
150Price on asking
175Price on asking
200Price on asking
225Price on asking
250Price on asking
275Price on asking
300Price on asking
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Stock information temporarily unavailable.

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more