Diodes Inc N-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC DMN4800LSSL-13
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1.46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Typical Gate Charge @ Vgs
8.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 18.41
€ 0.368 Each (In a Pack of 50) (Exc. VAT)
Standard
50
€ 18.41
€ 0.368 Each (In a Pack of 50) (Exc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1.46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Typical Gate Charge @ Vgs
8.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products