Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
8.56 nC @ 5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 9.09
€ 0.364 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
25
€ 9.09
€ 0.364 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
25
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
8.56 nC @ 5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


