Diodes Inc Dual N/P-Channel-Channel MOSFET, 7 A, 8.5 A, 30 V, 8-Pin SOIC DMC3021LSD-13
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 10.85
€ 0.434 Each (In a Pack of 25) (Exc. VAT)
Standard
25
€ 10.85
€ 0.434 Each (In a Pack of 25) (Exc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 100 | € 0.434 | € 10.85 |
| 125 - 600 | € 0.336 | € 8.41 |
| 625 - 1225 | € 0.281 | € 7.02 |
| 1250+ | € 0.226 | € 5.65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products