Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Number of Elements per Chip
1
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Please check again later.
€ 0.03
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
500
€ 0.03
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
500
Buy in bulk
Quantity | Unit price | Per Reel |
---|---|---|
500 - 900 | € 0.03 | € 3.02 |
1000 - 2400 | € 0.03 | € 3.02 |
2500 - 4900 | € 0.028 | € 2.77 |
5000+ | € 0.027 | € 2.65 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Number of Elements per Chip
1
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details