IGBT, FGH40N60SMDF, N-Canal, 80 A, 600 V, TO-247AB, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-247AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
15.6 x 4.7 x 20.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 52,12
€ 5,21 Each (Supplied in a Tube) (Sin IVA)
Empaque de Producción (Tubo)
10
€ 52,12
€ 5,21 Each (Supplied in a Tube) (Sin IVA)
Información de stock no disponible temporalmente.
Empaque de Producción (Tubo)
10
Información de stock no disponible temporalmente.
| Cantidad | Precio Unitario sin IVA |
|---|---|
| 10 - 99 | € 5,21 |
| 100 - 499 | € 4,51 |
| 500 - 999 | € 3,96 |
| 1000+ | € 3,61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-247AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
15.6 x 4.7 x 20.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products