Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
P
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Maximum Gate Threshold Voltage
1.5V
Series
ALFET
Maximum Operating Temperature
+150 °C
Maximum Drain Source Voltage
200 V
Maximum Continuous Drain Current
8 A
Height
8.7mm
Maximum Power Dissipation
125 W
Width
25mm
Length
39mm
Package Type
TO-3
Brand
SemelabCountry of Origin
United Kingdom
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1
Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
P
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Maximum Gate Threshold Voltage
1.5V
Series
ALFET
Maximum Operating Temperature
+150 °C
Maximum Drain Source Voltage
200 V
Maximum Continuous Drain Current
8 A
Height
8.7mm
Maximum Power Dissipation
125 W
Width
25mm
Length
39mm
Package Type
TO-3
Brand
SemelabCountry of Origin
United Kingdom