ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
935 W
Number of Elements per Chip
2
Width
45.6mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Length
122mm
Minimum Operating Temperature
-40 °C
Height
17mm
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
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€ 409.18
€ 409.18 Each (Exc. VAT)
1
€ 409.18
€ 409.18 Each (Exc. VAT)
1
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Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 4 | € 409.18 |
| 5 - 9 | € 398.54 |
| 10 - 24 | € 388.31 |
| 25+ | € 378.49 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
935 W
Number of Elements per Chip
2
Width
45.6mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Length
122mm
Minimum Operating Temperature
-40 °C
Height
17mm
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products