onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 78.34
€ 1.567 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
50
€ 78.34
€ 1.567 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
50
Buy in bulk
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 95 | € 1.567 | € 7.83 |
| 100 - 495 | € 1.359 | € 6.79 |
| 500 - 995 | € 1.194 | € 5.97 |
| 1000+ | € 1.085 | € 5.42 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products