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onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 181-1864Brand: onsemiManufacturers Part No.: FGH75T65SQDNL4
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

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Stock information temporarily unavailable.

€ 5.491

Each (In a Tube of 450) (Exc. VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

450

Available in multiples of 450
450€ 2,470.88
900€ 4,941.77
1350€ 7,412.65
1800€ 9,883.54
2250€ 12,354.42
2700€ 14,825.31
3150€ 17,296.19
3600€ 19,767.08
4050€ 22,237.96
4500€ 24,708.85
4950€ 27,179.73
5400€ 29,650.62
5850€ 32,121.50
6300€ 34,592.39
6750€ 37,063.27

€ 5.491

Each (In a Tube of 450) (Exc. VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

450

Available in multiples of 450
450€ 2,470.88
900€ 4,941.77
1350€ 7,412.65
1800€ 9,883.54
2250€ 12,354.42
2700€ 14,825.31
3150€ 17,296.19
3600€ 19,767.08
4050€ 22,237.96
4500€ 24,708.85
4950€ 27,179.73
5400€ 29,650.62
5850€ 32,121.50
6300€ 34,592.39
6750€ 37,063.27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more