Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Technical Document
Specifications
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
60 V
Series
Versaflo™ TR-619E
Maximum Continuous Drain Current
120 A
Brand
InfineonIdeate. Create. Collaborate
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€ 0.74
Each (In a Pack of 10) (Exc. Vat)
Standard
10
€ 0.74
Each (In a Pack of 10) (Exc. Vat)
Standard
10
Buy in bulk
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.74 | € 7.40 |
| 100 - 240 | € 0.703 | € 7.03 |
| 250 - 490 | € 0.674 | € 6.74 |
| 500 - 990 | € 0.644 | € 6.44 |
| 1000+ | € 0.407 | € 4.07 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
60 V
Series
Versaflo™ TR-619E
Maximum Continuous Drain Current
120 A
Brand
InfineonIdeate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products