Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
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€ 1.955
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
5
€ 1.955
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
5
Buy in bulk
| Quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 20 | € 1.955 | € 9.78 |
| 25 - 45 | € 1.76 | € 8.80 |
| 50 - 120 | € 1.643 | € 8.21 |
| 125 - 245 | € 1.526 | € 7.63 |
| 250+ | € 1.407 | € 7.03 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products