Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
274 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
40kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 22.5mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3100pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.65mJ
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P.O.A.
Standard
1
P.O.A.
Standard
1
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
274 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
40kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 22.5mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3100pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.65mJ