IGBT, STGP7NC60HD, N-Canal, 25 A, 600 V, TO-220, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
25 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
10.4 x 4.6 x 9.15mm
Temperatura Mínima de Funcionamiento
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 40,22
€ 0,804 Each (In a Tube of 50) (Sin IVA)
50
€ 40,22
€ 0,804 Each (In a Tube of 50) (Sin IVA)
Información de stock no disponible temporalmente.
50
Información de stock no disponible temporalmente.
| Cantidad | Precio Unitario sin IVA | Per Tubo |
|---|---|---|
| 50 - 50 | € 0,804 | € 40,22 |
| 100 - 450 | € 0,689 | € 34,45 |
| 500 - 950 | € 0,671 | € 33,53 |
| 1000 - 4950 | € 0,653 | € 32,66 |
| 5000+ | € 0,637 | € 31,85 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
25 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
10.4 x 4.6 x 9.15mm
Temperatura Mínima de Funcionamiento
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products