IGBT, STGW60V60DF, N-Canal, 60 A, 600 V, TO-247, 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
375000 mW
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones del Cuerpo
15.75 x 5.15 x 20.15mm
Temperatura Máxima de Operación
+175 °C
Temperatura Mínima de Funcionamiento
-55 °C
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 23,60
€ 4,719 Each (In a Pack of 5) (Sin IVA)
Estándar
5
€ 23,60
€ 4,719 Each (In a Pack of 5) (Sin IVA)
Información de stock no disponible temporalmente.
Estándar
5
Información de stock no disponible temporalmente.
| Cantidad | Precio Unitario sin IVA | Per Pack |
|---|---|---|
| 5 - 5 | € 4,719 | € 23,60 |
| 10 - 20 | € 4,483 | € 22,42 |
| 25 - 45 | € 4,036 | € 20,18 |
| 50+ | € 4,013 | € 20,07 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
375000 mW
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones del Cuerpo
15.75 x 5.15 x 20.15mm
Temperatura Máxima de Operación
+175 °C
Temperatura Mínima de Funcionamiento
-55 °C
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products