Módulo IGBT, MII100-12A3, N-Canal, 135 A, 1200 V, Y4 M5, 7-Pines Serie
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
135 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
Y4 M5
Configuración
Series
Tipo de montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
7
Configuración de transistor
Series
Dimensiones del Cuerpo
94 x 34 x 30mm
Mínima Temperatura de Funcionamiento
–40 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Ancho
34mm
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 71,27
€ 71,27 Each (Sin IVA)
1
€ 71,27
€ 71,27 Each (Sin IVA)
1
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
135 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
Y4 M5
Configuración
Series
Tipo de montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
7
Configuración de transistor
Series
Dimensiones del Cuerpo
94 x 34 x 30mm
Mínima Temperatura de Funcionamiento
–40 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Ancho
34mm
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products