Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Configuración de transistor
Single
Máxima Temperatura de Funcionamiento
+150 ºC
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 253,22
€ 8,441 Each (In a Tube of 30) (Sin IVA)
30
€ 253,22
€ 8,441 Each (In a Tube of 30) (Sin IVA)
30
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Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Configuración de transistor
Single
Máxima Temperatura de Funcionamiento
+150 ºC
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.