Transistor MOSFET onsemi NVH4L020N120SC1, VDSS 1.200 V, ID 102 A, TO-247-4 de 4 pines
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
102 A
Tensión Máxima Drenador-Fuente
1200 V
Series
NVH
Tipo de Encapsulado
TO-247-4
Tipo de montaje
Through Hole
Conteo de Pines
4
Resistencia Máxima Drenador-Fuente
0.028 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
4.3V
Número de Elementos por Chip
1
Material del transistor
SiC
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€ 15.322,12
€ 34,049 Each (In a Tube of 450) (Sin IVA)
450
€ 15.322,12
€ 34,049 Each (In a Tube of 450) (Sin IVA)
450
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
102 A
Tensión Máxima Drenador-Fuente
1200 V
Series
NVH
Tipo de Encapsulado
TO-247-4
Tipo de montaje
Through Hole
Conteo de Pines
4
Resistencia Máxima Drenador-Fuente
0.028 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
4.3V
Número de Elementos por Chip
1
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products