IGBT, IXXH80N65B4H1, N-Canal, 430 A, 650 V, TO-247AD, 3-Pines, 5 → 30kHz 1 Simple
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
430 A
Tensión Máxima Colector-Emisor
650 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
625000 mW
Número de transistores
1
Tipo de Encapsulado
TO-247AD
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
5 → 30kHz
Configuración de transistor
Single
Dimensiones
16.1 x 5.2 x 21.3mm
Temperatura Mínima de Operación
-55 °C
Temperatura máxima de funcionamiento
+175 °C
Energía nominal
5.2mJ
País de Origen
Philippines
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 322,14
€ 10,738 Each (In a Tube of 30) (Sin IVA)
30
€ 322,14
€ 10,738 Each (In a Tube of 30) (Sin IVA)
30
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Vuelva a verificar más tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
430 A
Tensión Máxima Colector-Emisor
650 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
625000 mW
Número de transistores
1
Tipo de Encapsulado
TO-247AD
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
5 → 30kHz
Configuración de transistor
Single
Dimensiones
16.1 x 5.2 x 21.3mm
Temperatura Mínima de Operación
-55 °C
Temperatura máxima de funcionamiento
+175 °C
Energía nominal
5.2mJ
País de Origen
Philippines
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products