IGBT, IXGT30N120B3D1, 50 A, 1.200 V, TO-268, 3-Pines Simple

Código de producto RS: 192-635Marca: IXYSNúmero de parte de fabricante: IXGT30N120B3D1
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Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tipo de Encapsulado

TO-268

Tipo de montaje

Surface Mount

Conteo de Pines

3

Configuración de transistor

Single

Dimensiones del Cuerpo

16.05 x 14 x 5.1mm

Temperatura Máxima de Funcionamiento

+150 ºC

Temperatura Mínima de Funcionamiento

-55 °C

Datos del producto

Discretos IGBT, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Información de stock no disponible temporalmente.

$ 20,91

$ 20,91 Each (Sin IVA)

IGBT, IXGT30N120B3D1, 50 A, 1.200 V, TO-268, 3-Pines Simple

1

Disponible en múltiplos de 1
1$ 20,91
2$ 41,82
3$ 62,73
4$ 83,64
5$ 104,55
6$ 125,46
7$ 146,36
8$ 167,27
9$ 188,18
10$ 209,09
11$ 230,00
12$ 250,91
13$ 271,82
14$ 292,73
15$ 313,64

$ 20,91

$ 20,91 Each (Sin IVA)

IGBT, IXGT30N120B3D1, 50 A, 1.200 V, TO-268, 3-Pines Simple
Información de stock no disponible temporalmente.

1

Disponible en múltiplos de 1
1$ 20,91
2$ 41,82
3$ 62,73
4$ 83,64
5$ 104,55
6$ 125,46
7$ 146,36
8$ 167,27
9$ 188,18
10$ 209,09
11$ 230,00
12$ 250,91
13$ 271,82
14$ 292,73
15$ 313,64

Información de stock no disponible temporalmente.

Vuelva a verificar más tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Te podría interesar

Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tipo de Encapsulado

TO-268

Tipo de montaje

Surface Mount

Conteo de Pines

3

Configuración de transistor

Single

Dimensiones del Cuerpo

16.05 x 14 x 5.1mm

Temperatura Máxima de Funcionamiento

+150 ºC

Temperatura Mínima de Funcionamiento

-55 °C

Datos del producto

Discretos IGBT, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Te podría interesar