MOSFET Infineon IPW65R190CFDFKSA1, VDSS 650 V, ID 17,5 A, TO-247 de 3 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
17.5 A
Tensión Máxima Drenador-Fuente
650 V
Series
CoolMOS™ CFD
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
190 m.Ω
Modo de Canal
Mejora
Disipación de Potencia Máxima
151 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-30 V, +30 V
Anchura
5.21mm
Material del transistor
Si
Número de Elementos por Chip
1
Longitud:
16.13mm
Carga Típica de Puerta @ Vgs
68 nC a 10 V
Temperatura Máxima de Funcionamiento
+150 ºC
Altura
21.1mm
Temperatura Mínima de Funcionamiento
-55 °C
Tensión de diodo directa
0.9V
País de Origen
China
Datos del producto
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Price on asking
Each (In a Tube of 30) (Sin IVA)
30
Price on asking
Each (In a Tube of 30) (Sin IVA)
30
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Vuelva a verificar más tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
17.5 A
Tensión Máxima Drenador-Fuente
650 V
Series
CoolMOS™ CFD
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
190 m.Ω
Modo de Canal
Mejora
Disipación de Potencia Máxima
151 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-30 V, +30 V
Anchura
5.21mm
Material del transistor
Si
Número de Elementos por Chip
1
Longitud:
16.13mm
Carga Típica de Puerta @ Vgs
68 nC a 10 V
Temperatura Máxima de Funcionamiento
+150 ºC
Altura
21.1mm
Temperatura Mínima de Funcionamiento
-55 °C
Tensión de diodo directa
0.9V
País de Origen
China
Datos del producto
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products