MOSFET Vishay SIHB11N80AE-GE3, VDSS 800 V, ID 8 A, D2PAK (TO-263) de 3 pines
Documentos Técnicos
Especificaciones
Brand
VishayTipo de Canal
N
Maximum Continuous Drain Current
8 A
Tensión Máxima Drenador-Fuente
800 V
Series
E
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
0.391 Ω
Tensión de umbral de puerta máxima
2 → 4V
Número de Elementos por Chip
1
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€ 37,08
€ 0,742 Each (In a Tube of 50) (Sin IVA)
50
€ 37,08
€ 0,742 Each (In a Tube of 50) (Sin IVA)
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
VishayTipo de Canal
N
Maximum Continuous Drain Current
8 A
Tensión Máxima Drenador-Fuente
800 V
Series
E
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
0.391 Ω
Tensión de umbral de puerta máxima
2 → 4V
Número de Elementos por Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products