IGBT, STGP7NC60HD, N-Canal, 25 A, 600 V, TO-220, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
25 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-220
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.4 x 4.6 x 9.15mm
Temperatura Mínima de Operación
-55 °C
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
€ 1,24
Each (In a Tube of 50) (Sin IVA)
50
€ 1,24
Each (In a Tube of 50) (Sin IVA)
50
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Tubo |
|---|---|---|
| 50 - 50 | € 1,24 | € 61,99 |
| 100 - 450 | € 0,936 | € 46,79 |
| 500 - 950 | € 0,789 | € 39,46 |
| 1000 - 4950 | € 0,669 | € 33,44 |
| 5000+ | € 0,652 | € 32,61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
25 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-220
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.4 x 4.6 x 9.15mm
Temperatura Mínima de Operación
-55 °C
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products