Módulo IGBT, SKM150GAL12T4 , N-Canal, 232 A, 1200 V, SEMITRANS2, 5-Pines Simple
Documentos Técnicos
Especificaciones
Brand
SemikronCorriente Máxima Continua del Colector
232 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
SEMITRANS2
Configuration
Single
Tipo de Montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
5
Transistor Configuration
Single
Temperatura Máxima de Funcionamiento
+175 °C
Dimensiones
94 x 34 x 30.1mm
Temperatura de Funcionamiento Mínima
-40 ºC
Profundidad
34mm
Datos del producto
Módulos IGBT simples
Semikron ofrece módulos IGBT (transistor bipolar de puerta aislada) en encapsulados SEMITRANS, SEMiX y SEMITOP en varias topologías, valores de corriente y tensiones nominales.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 60,36
Each (Sin IVA)
1
€ 60,36
Each (Sin IVA)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
SemikronCorriente Máxima Continua del Colector
232 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
SEMITRANS2
Configuration
Single
Tipo de Montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
5
Transistor Configuration
Single
Temperatura Máxima de Funcionamiento
+175 °C
Dimensiones
94 x 34 x 30.1mm
Temperatura de Funcionamiento Mínima
-40 ºC
Profundidad
34mm
Datos del producto
Módulos IGBT simples
Semikron ofrece módulos IGBT (transistor bipolar de puerta aislada) en encapsulados SEMITRANS, SEMiX y SEMITOP en varias topologías, valores de corriente y tensiones nominales.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products