IGBT, NGTB30N120FL2WG, N-Canal, 60 A, 1.200 V, TO-247, 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
ON SemiconductorCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
452 W
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
16.25 x 5.3 x 21.4mm
Temperatura Mínima de Funcionamiento
-55 °C
Temperatura Máxima de Funcionamiento
+175 °C
País de Origen
China
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
30
P.O.A.
30
Ideate. Create. Collaborate
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Documentos Técnicos
Especificaciones
Brand
ON SemiconductorCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
452 W
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
16.25 x 5.3 x 21.4mm
Temperatura Mínima de Funcionamiento
-55 °C
Temperatura Máxima de Funcionamiento
+175 °C
País de Origen
China
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products