IGBT, STGW20NC60VD, N-Canal, 60 A, 600 V, TO-247, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
15.75 x 5.15 x 20.15mm
Temperatura Mínima de Funcionamiento
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 3,74
€ 3,74 Each (Sin IVA)
Estándar
1
€ 3,74
€ 3,74 Each (Sin IVA)
Información de stock no disponible temporalmente.
Estándar
1
Información de stock no disponible temporalmente.
| Cantidad | Precio Unitario sin IVA |
|---|---|
| 1 - 9 | € 3,74 |
| 10 - 99 | € 3,49 |
| 100 - 499 | € 3,38 |
| 500 - 999 | € 3,30 |
| 1000+ | € 3,22 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
15.75 x 5.15 x 20.15mm
Temperatura Mínima de Funcionamiento
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products