IGBT, STGD5H60DF, N-Canal, 10 A, 600 V, DPAK (TO-252), 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
10 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
83000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de Montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Temperatura Mínima de Funcionamiento
-55 °C
Capacitancia de puerta
855pF
Temperatura Máxima de Operación
+175 °C
Energía nominal
221mJ
País de Origen
China
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 39,97
€ 0,799 Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
50
€ 39,97
€ 0,799 Each (Supplied on a Reel) (Sin IVA)
Información de stock no disponible temporalmente.
Empaque de Producción (Rollo)
50
Información de stock no disponible temporalmente.
| Cantidad | Precio Unitario sin IVA | Per Rollo |
|---|---|---|
| 50 - 90 | € 0,799 | € 8,00 |
| 100 - 240 | € 0,719 | € 7,19 |
| 250 - 490 | € 0,648 | € 6,48 |
| 500+ | € 0,616 | € 6,16 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
10 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
83000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de Montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Temperatura Mínima de Funcionamiento
-55 °C
Capacitancia de puerta
855pF
Temperatura Máxima de Operación
+175 °C
Energía nominal
221mJ
País de Origen
China
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products