IGBT, STGD19N40LZ, N-Canal, 25 A, 425 V, DPAK (TO-252), 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
25 A
Tensión Máxima Colector-Emisor
425 V
Tensión Máxima Puerta-Emisor
±16V
Disipación de Potencia Máxima
125000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de Montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Temperatura Máxima de Operación
+175 °C
Temperatura Mínima de Funcionamiento
-55 °C
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Price on asking
Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
5
Price on asking
Each (Supplied on a Reel) (Sin IVA)
Información de stock no disponible temporalmente.
Empaque de Producción (Rollo)
5
Información de stock no disponible temporalmente.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
25 A
Tensión Máxima Colector-Emisor
425 V
Tensión Máxima Puerta-Emisor
±16V
Disipación de Potencia Máxima
125000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de Montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Temperatura Máxima de Operación
+175 °C
Temperatura Mínima de Funcionamiento
-55 °C
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products