Transistor Darlington, ST901T, NPN 4 A, 350 V, HFE:500, TO-220, 3 pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsTipo de Transistor
NPN
Corriente Máxima Continua del Colector
4 A
Tensión Máxima Colector-Emisor
350 V
Tensión Máxima Emisor-Base
5 V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Conteo de Pines
3
Transistor Configuration
Single
Número de Elementos por Chip
1
Ganancia Mínima de Corriente DC
500
Tensión de Saturación Máxima Base-Emisor
1.8 V
Maximum Collector Emitter Saturation Voltage
2 V
Corriente de Corte Máxima del Colector
500µA
Altura
6.2mm
Profundidad
2.4mm
Disipación de Potencia Máxima
100000 mW
Dimensiones
6.6 x 2.4 x 6.2mm
Longitud
6.6mm
Temperatura máxima de funcionamiento
+150 ºC
País de Origen
China
Datos del producto
Transistores Darlington NPN, ST Microelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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€ 1,157
Each (In a Tube of 50) (Sin IVA)
50
€ 1,157
Each (In a Tube of 50) (Sin IVA)
50
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Tubo |
|---|---|---|
| 50 - 50 | € 1,157 | € 57,83 |
| 100 - 200 | € 0,862 | € 43,10 |
| 250 - 450 | € 0,855 | € 42,74 |
| 500 - 950 | € 0,731 | € 36,55 |
| 1000+ | € 0,593 | € 29,65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsTipo de Transistor
NPN
Corriente Máxima Continua del Colector
4 A
Tensión Máxima Colector-Emisor
350 V
Tensión Máxima Emisor-Base
5 V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Conteo de Pines
3
Transistor Configuration
Single
Número de Elementos por Chip
1
Ganancia Mínima de Corriente DC
500
Tensión de Saturación Máxima Base-Emisor
1.8 V
Maximum Collector Emitter Saturation Voltage
2 V
Corriente de Corte Máxima del Colector
500µA
Altura
6.2mm
Profundidad
2.4mm
Disipación de Potencia Máxima
100000 mW
Dimensiones
6.6 x 2.4 x 6.2mm
Longitud
6.6mm
Temperatura máxima de funcionamiento
+150 ºC
País de Origen
China
Datos del producto
Transistores Darlington NPN, ST Microelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products