Módulo MOSFET STMicroelectronics SCTW35N65G2VAG, VDSS 650 V, ID 45 A, HiP247 de 3 pines
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsTipo de Canal
N
Maximum Continuous Drain Current
45 A
Tensión Máxima Drenador-Fuente
650 V
Series
SCT
Tipo de Encapsulado
Hip247
Tipo de Montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
0.055 Ω
Modo de Canal
Depletion
Tensión de umbral de puerta máxima
5V
Número de Elementos por Chip
1
Material del transistor
SiC
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€ 12,113
Each (In a Tube of 30) (Sin IVA)
30
€ 12,113
Each (In a Tube of 30) (Sin IVA)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsTipo de Canal
N
Maximum Continuous Drain Current
45 A
Tensión Máxima Drenador-Fuente
650 V
Series
SCT
Tipo de Encapsulado
Hip247
Tipo de Montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
0.055 Ω
Modo de Canal
Depletion
Tensión de umbral de puerta máxima
5V
Número de Elementos por Chip
1
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products