IGBT, NGTB25N120FL3WG, N-Canal, 100 A, 1.200 V, TO-247, 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
100 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
16.25 x 5.3 x 21.4mm
Temperatura Mínima de Operación
-55 °C
Capacitancia de puerta
3085pF
Máxima Temperatura de Funcionamiento
+175 °C
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 5,941
Each (In a Pack of 2) (Sin IVA)
2
€ 5,941
Each (In a Pack of 2) (Sin IVA)
2
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Pack |
|---|---|---|
| 2 - 8 | € 5,941 | € 11,88 |
| 10 - 98 | € 5,046 | € 10,09 |
| 100 - 248 | € 4,041 | € 8,08 |
| 250 - 498 | € 3,818 | € 7,64 |
| 500+ | € 3,579 | € 7,16 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
100 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
16.25 x 5.3 x 21.4mm
Temperatura Mínima de Operación
-55 °C
Capacitancia de puerta
3085pF
Máxima Temperatura de Funcionamiento
+175 °C
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products