IGBT, HGT1S10N120BNST, N-Canal, 80 A, 1.200 V, D2PAK (TO-263), 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
298000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 11.33 x 4.83mm
Temperatura Mínima de Operación
-55 °C
Temperatura de Funcionamiento Máxima
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 3,864
Each (Supplied on a Reel) (Sin IVA)
2
€ 3,864
Each (Supplied on a Reel) (Sin IVA)
2
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Rollo |
|---|---|---|
| 2 - 6 | € 3,864 | € 7,73 |
| 8 - 38 | € 3,438 | € 6,88 |
| 40 - 198 | € 3,047 | € 6,09 |
| 200 - 398 | € 2,639 | € 5,28 |
| 400+ | € 2,306 | € 4,61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
298000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 11.33 x 4.83mm
Temperatura Mínima de Operación
-55 °C
Temperatura de Funcionamiento Máxima
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products