IGBT, FGL40N120ANDTU, N-Canal, 64 A, 1.200 V, TO-264, 3-Pines Simple

Código de producto RS: 671-5408PMarca: onsemiNúmero de parte de fabricante: FGL40N120ANDTU
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Ver todo en IGBT

Documentos Técnicos

Especificaciones

Brand

onsemi

Corriente Máxima Continua del Colector

64 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±25V

Tipo de Encapsulado

TO-264

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones del Cuerpo

20 x 5 x 26mm

Temperatura Mínima de Operación

-55 °C

Máxima Temperatura de Funcionamiento

+150 ºC

Datos del producto

IGBT discretos, 1.000 V y superior, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Información de stock no disponible temporalmente.

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Información de stock no disponible temporalmente.

€ 10,95

Each (Supplied in a Tube) (Sin IVA)

IGBT, FGL40N120ANDTU, N-Canal, 64 A, 1.200 V, TO-264, 3-Pines Simple
Seleccionar tipo de embalaje

€ 10,95

Each (Supplied in a Tube) (Sin IVA)

IGBT, FGL40N120ANDTU, N-Canal, 64 A, 1.200 V, TO-264, 3-Pines Simple
Información de stock no disponible temporalmente.
Seleccionar tipo de embalaje

Comprar en grandes cantidades

CantidadPrecio Unitario sin IVA
1 - 12€ 10,95
13+€ 9,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

onsemi

Corriente Máxima Continua del Colector

64 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±25V

Tipo de Encapsulado

TO-264

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones del Cuerpo

20 x 5 x 26mm

Temperatura Mínima de Operación

-55 °C

Máxima Temperatura de Funcionamiento

+150 ºC

Datos del producto

IGBT discretos, 1.000 V y superior, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more