IGBT, FGA40N65SMD, N-Canal, 40 A, 650 V, TO-3PN, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
40 A
Tensión Máxima Colector-Emisor
650 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-3PN
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
16.2 x 5 x 20.1mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 2,935
Each (In a Tube of 30) (Sin IVA)
30
€ 2,935
Each (In a Tube of 30) (Sin IVA)
30
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Tubo |
|---|---|---|
| 30 - 30 | € 2,935 | € 88,06 |
| 60+ | € 2,759 | € 82,77 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
40 A
Tensión Máxima Colector-Emisor
650 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-3PN
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
16.2 x 5 x 20.1mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products