MOSFET onsemi FDS8884, VDSS 30 V, ID 8.5 A, SOIC de 8 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
8.5 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Series
PowerTrench
Tipo de Encapsulado
SOIC
Tipo de Montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
23 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1.2V
Disipación de Potencia Máxima
2.5 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Carga Típica de Puerta @ Vgs
9,2 nC a 10 V
Número de Elementos por Chip
1
Temperatura Máxima de Funcionamiento
+150 ºC
Longitud:
5mm
Profundidad
4mm
Material del transistor
Si
Temperatura Mínima de Funcionamiento
-55 °C
Altura
1.5mm
Datos del producto
MOSFET de canal N PowerTrench®, hasta 9,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 1,82
€ 0,182 Each (In a Pack of 10) (Sin IVA)
Estándar
10
€ 1,82
€ 0,182 Each (In a Pack of 10) (Sin IVA)
Estándar
10
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
8.5 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Series
PowerTrench
Tipo de Encapsulado
SOIC
Tipo de Montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
23 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1.2V
Disipación de Potencia Máxima
2.5 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Carga Típica de Puerta @ Vgs
9,2 nC a 10 V
Número de Elementos por Chip
1
Temperatura Máxima de Funcionamiento
+150 ºC
Longitud:
5mm
Profundidad
4mm
Material del transistor
Si
Temperatura Mínima de Funcionamiento
-55 °C
Altura
1.5mm
Datos del producto
MOSFET de canal N PowerTrench®, hasta 9,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products