MOSFET onsemi FDS6680A, VDSS 30 V, ID 12.5 A, SOIC de 8 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
12.5 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Series
PowerTrench
Tipo de Encapsulado
SOIC W
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
10 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1V
Disipación de Potencia Máxima
2,5 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Carga Típica de Puerta @ Vgs
16 nC a 5 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Longitud
5mm
Profundidad
4mm
Material del transistor
Si
Temperatura Mínima de Operación
-55 °C
Altura
1.5mm
Datos del producto
MOSFET de canal N PowerTrench®, de 10 A a 19,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 0,291
Each (In a Pack of 5) (Sin IVA)
Estándar
5
€ 0,291
Each (In a Pack of 5) (Sin IVA)
Estándar
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
12.5 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Series
PowerTrench
Tipo de Encapsulado
SOIC W
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
10 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1V
Disipación de Potencia Máxima
2,5 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Carga Típica de Puerta @ Vgs
16 nC a 5 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Longitud
5mm
Profundidad
4mm
Material del transistor
Si
Temperatura Mínima de Operación
-55 °C
Altura
1.5mm
Datos del producto
MOSFET de canal N PowerTrench®, de 10 A a 19,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products