MOSFET onsemi RFP50N06, VDSS 60 V, ID 50 A, TO-220AB de 3 pines, config. Simple
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
50 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TO-220AB
Series
MegaFET
Tipo de Montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
22 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
2V
Disipación de Potencia Máxima
131 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Temperatura Máxima de Funcionamiento
+175 °C
Longitud
10.67mm
Ancho
4.83mm
Material del transistor
Si
Carga Típica de Puerta @ Vgs
125 nC a 20 V
Número de Elementos por Chip
1
Temperatura Mínima de Funcionamiento
-55 °C
Altura
9.4mm
Datos del producto
MegaFET MOSFET, Fairchild Semiconductor
El proceso MegaFET, que utiliza tamaños similares a los de los circuitos integrados LSI, proporciona un uso óptimo del silicio, lo que ofrece un rendimiento extraordinario.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Empaque de Producción (Cinta)
1
P.O.A.
Empaque de Producción (Cinta)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
50 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TO-220AB
Series
MegaFET
Tipo de Montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
22 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
2V
Disipación de Potencia Máxima
131 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Temperatura Máxima de Funcionamiento
+175 °C
Longitud
10.67mm
Ancho
4.83mm
Material del transistor
Si
Carga Típica de Puerta @ Vgs
125 nC a 20 V
Número de Elementos por Chip
1
Temperatura Mínima de Funcionamiento
-55 °C
Altura
9.4mm
Datos del producto
MegaFET MOSFET, Fairchild Semiconductor
El proceso MegaFET, que utiliza tamaños similares a los de los circuitos integrados LSI, proporciona un uso óptimo del silicio, lo que ofrece un rendimiento extraordinario.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products