IGBT, NGTG12N60TF1G, N-Canal, 88 A (pulso), 600 V, TO-3PF, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
ON SemiconductorCorriente Máxima Continua del Colector
88 A (pulso)
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
54 W
Tipo de Encapsulado
TO-3PF
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.5 x 5.5 x 26.5mm
Temperatura de Funcionamiento Máxima
+150 ºC
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
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Documentos Técnicos
Especificaciones
Brand
ON SemiconductorCorriente Máxima Continua del Colector
88 A (pulso)
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
54 W
Tipo de Encapsulado
TO-3PF
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.5 x 5.5 x 26.5mm
Temperatura de Funcionamiento Máxima
+150 ºC
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products