IGBT, FGA50N100BNTDTU, N-Canal, 50 A, 1.000 V, TO-3P, 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
ON SemiconductorCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1000 V
Tensión Máxima Puerta-Emisor
±25V
Disipación de Potencia Máxima
63000 mW
Tipo de Encapsulado
TO-3P
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
15.8 x 5 x 20.1mm
Temperatura Mínima de Operación
-55 °C
Temperatura de Funcionamiento Máxima
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
30
P.O.A.
30
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Documentos Técnicos
Especificaciones
Brand
ON SemiconductorCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1000 V
Tensión Máxima Puerta-Emisor
±25V
Disipación de Potencia Máxima
63000 mW
Tipo de Encapsulado
TO-3P
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
15.8 x 5 x 20.1mm
Temperatura Mínima de Operación
-55 °C
Temperatura de Funcionamiento Máxima
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products