Módulo IGBT, MPMC100B120RH, Serie, 100 A, 1.200 V, N-Canal, 7DM-2, 7-Pines Serie
Documentos Técnicos
Especificaciones
Brand
MagnaChipCorriente Máxima Continua del Colector
100 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
694 W
Tipo de Encapsulado
7DM-2
Configuración
Series
Tipo de Montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
7
Velocidad de Conmutación
70kHz
Configuración de transistor
Series
Dimensiones del Cuerpo
94 x 48 x 22mm
Temperatura Mínima de Funcionamiento
-55 °C
Temperatura Máxima de Operación
+150 ºC
País de Origen
Korea, Republic Of
Datos del producto
Módulos IGBT, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Price on asking
1
Price on asking
Información de stock no disponible temporalmente.
1
Información de stock no disponible temporalmente.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
MagnaChipCorriente Máxima Continua del Colector
100 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
694 W
Tipo de Encapsulado
7DM-2
Configuración
Series
Tipo de Montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
7
Velocidad de Conmutación
70kHz
Configuración de transistor
Series
Dimensiones del Cuerpo
94 x 48 x 22mm
Temperatura Mínima de Funcionamiento
-55 °C
Temperatura Máxima de Operación
+150 ºC
País de Origen
Korea, Republic Of
Datos del producto
Módulos IGBT, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products