IGBT, NGD8201ANT4G, N-Canal, 50 A, 440 V, DPAK, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
LittlefuseCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
440 V
Tensión Máxima Puerta-Emisor
±15V
Disipación de Potencia Máxima
125000 mW
Tipo de Encapsulado
D-PAK
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
6.73 x 7.49 x 2.38mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Ideate. Create. Collaborate
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Documentos Técnicos
Especificaciones
Brand
LittlefuseCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
440 V
Tensión Máxima Puerta-Emisor
±15V
Disipación de Potencia Máxima
125000 mW
Tipo de Encapsulado
D-PAK
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
6.73 x 7.49 x 2.38mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
Discretos IGBT, ON Semiconductor
Transistores bipolares de puerta aislada (IGBT) para variador de motor y otras aplicaciones de conmutación de alta corriente.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products