Módulo IGBT, MG06400D-BN4MM, N-Canal, 460 A, 600 V, Módulo 62MM, 7-Pines, 1MHZ Serie
Documentos Técnicos
Especificaciones
Brand
LittelfuseCorriente Máxima Continua del Colector
460 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
1.400 W
Tipo de Encapsulado
Módulo 62MM
Configuration
Series
Tipo de Montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
7
Velocidad de Conmutación
1MHz
Transistor Configuration
Serie
Dimensiones del Cuerpo
108 x 62 x 30.5mm
Temperatura de Funcionamiento Mínima
-40 ºC
Temperatura Máxima de Funcionamiento
+150 ºC
País de Origen
China
Datos del producto
IGBT Modules, Littelfuse
Pérdida ultra baja
Dureza alta
Capacidad de cortocircuito alta
Coeficiente de temperatura positivo
Aplicaciones en variadores de motor, inversor, convertidor CC/CC, SMPS y UPS
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
Estándar
1
P.O.A.
Estándar
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
LittelfuseCorriente Máxima Continua del Colector
460 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
1.400 W
Tipo de Encapsulado
Módulo 62MM
Configuration
Series
Tipo de Montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
7
Velocidad de Conmutación
1MHz
Transistor Configuration
Serie
Dimensiones del Cuerpo
108 x 62 x 30.5mm
Temperatura de Funcionamiento Mínima
-40 ºC
Temperatura Máxima de Funcionamiento
+150 ºC
País de Origen
China
Datos del producto
IGBT Modules, Littelfuse
Pérdida ultra baja
Dureza alta
Capacidad de cortocircuito alta
Coeficiente de temperatura positivo
Aplicaciones en variadores de motor, inversor, convertidor CC/CC, SMPS y UPS
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products