Módulo IGBT, MIXA450PF1200TSF, N-Canal, 650 A, 1.200 V, SimBus F, 11-Pines Serie
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
650 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±30V
Disipación de Potencia Máxima
2.1 kW
Tipo de Encapsulado
SimBus F
Configuration
Dual
Tipo de montaje
PCB Mount
Tipo de Canal
N
Conteo de Pines
11
Transistor Configuration
Series
Dimensiones del Cuerpo
152 x 62 x 17mm
Temperatura de Funcionamiento Máxima
+150 ºC
Temperatura Mínima de Operación
-40 ºC
País de Origen
Germany
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 170,443
Each (In a Box of 3) (Sin IVA)
3
€ 170,443
Each (In a Box of 3) (Sin IVA)
3
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
650 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±30V
Disipación de Potencia Máxima
2.1 kW
Tipo de Encapsulado
SimBus F
Configuration
Dual
Tipo de montaje
PCB Mount
Tipo de Canal
N
Conteo de Pines
11
Transistor Configuration
Series
Dimensiones del Cuerpo
152 x 62 x 17mm
Temperatura de Funcionamiento Máxima
+150 ºC
Temperatura Mínima de Operación
-40 ºC
País de Origen
Germany
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products