Módulo IGBT, MID200-12A4, N-Canal, 270 A, 1.200 V, Y3 DCB, 5-Pines Simple
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
270 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
Y3 DCB
Configuration
Single
Tipo de montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
5
Transistor Configuration
Single
Dimensiones
110 x 62 x 30mm
Temperatura Mínima de Funcionamiento
-40 ºC
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 130,575
Each (In a Box of 2) (Sin IVA)
2
€ 130,575
Each (In a Box of 2) (Sin IVA)
2
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Caja |
|---|---|---|
| 2 - 8 | € 130,575 | € 261,15 |
| 10 - 18 | € 127,183 | € 254,37 |
| 20+ | € 124,043 | € 248,09 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
270 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
Y3 DCB
Configuration
Single
Tipo de montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
5
Transistor Configuration
Single
Dimensiones
110 x 62 x 30mm
Temperatura Mínima de Funcionamiento
-40 ºC
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products