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IGBT, IXGH30N120B3D1, 50 A, 1.200 V, TO-247, 3-Pines Simple

Código de producto RS: 168-4412Marca: IXYSNúmero de parte de fabricante: IXGH30N120B3D1
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Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tipo de Encapsulado

TO-247

Tipo de montaje

Through Hole

Conteo de Pines

3

Configuración de transistor

Single

Máxima Temperatura de Funcionamiento

+150 ºC

Mínima Temperatura de Funcionamiento

-55 °C

Datos del producto

Discretos IGBT, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Información de stock no disponible temporalmente.

€ 253,22

€ 8,441 Each (In a Tube of 30) (Sin IVA)

IGBT, IXGH30N120B3D1, 50 A, 1.200 V, TO-247, 3-Pines Simple

€ 253,22

€ 8,441 Each (In a Tube of 30) (Sin IVA)

IGBT, IXGH30N120B3D1, 50 A, 1.200 V, TO-247, 3-Pines Simple
Información de stock no disponible temporalmente.

Información de stock no disponible temporalmente.

Vuelva a verificar más tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tipo de Encapsulado

TO-247

Tipo de montaje

Through Hole

Conteo de Pines

3

Configuración de transistor

Single

Máxima Temperatura de Funcionamiento

+150 ºC

Mínima Temperatura de Funcionamiento

-55 °C

Datos del producto

Discretos IGBT, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more