MOSFET Infineon IRF7311TRPBF, VDSS 20 V, ID 6,6 A, SO-8 de 8 pines
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
6.6 A
Tensión Máxima Drenador-Fuente
20 (canal N) V, -20 (canal P) V
Serie
HEXFET
Tipo de Encapsulado
SO-8
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
0,029 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
0.7V
Número de Elementos por Chip
1
Material del transistor
Si
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€ 0,467
Each (On a Reel of 4000) (Sin IVA)
4000
€ 0,467
Each (On a Reel of 4000) (Sin IVA)
4000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
6.6 A
Tensión Máxima Drenador-Fuente
20 (canal N) V, -20 (canal P) V
Serie
HEXFET
Tipo de Encapsulado
SO-8
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
0,029 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
0.7V
Número de Elementos por Chip
1
Material del transistor
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products