MOSFET Infineon IPT020N10N3ATMA1, VDSS 100 V, ID 300 A, HSOF-8 de 8 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
300 A
Tensión Máxima Drenador-Fuente
-100 V
Tipo de Encapsulado
HSOF-8
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
3,7 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
375000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Carga Típica de Puerta @ Vgs
156 nC a 10 V
Máxima Temperatura de Funcionamiento
+175 °C
Profundidad
10.1mm
Número de Elementos por Chip
1
Material del transistor
Si
Longitud
10.58mm
Tensión de diodo directa
1V
Altura
2.4mm
Serie
OptiMOS 3
Temperatura Mínima de Operación
-55 °C
Datos del producto
MOSFET de potencia Infineon OptiMOS™3, 100 V y superior
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 4,304
Each (On a Reel of 2000) (Sin IVA)
2000
€ 4,304
Each (On a Reel of 2000) (Sin IVA)
2000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
300 A
Tensión Máxima Drenador-Fuente
-100 V
Tipo de Encapsulado
HSOF-8
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
3,7 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
375000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Carga Típica de Puerta @ Vgs
156 nC a 10 V
Máxima Temperatura de Funcionamiento
+175 °C
Profundidad
10.1mm
Número de Elementos por Chip
1
Material del transistor
Si
Longitud
10.58mm
Tensión de diodo directa
1V
Altura
2.4mm
Serie
OptiMOS 3
Temperatura Mínima de Operación
-55 °C
Datos del producto
MOSFET de potencia Infineon OptiMOS™3, 100 V y superior
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products