MOSFET Infineon IPD80R900P7ATMA1, VDSS 800 V, ID 6 A, DPAK (TO-252) de 3 pines
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
6 A
Tensión Máxima Drenador-Fuente
800 V
Serie
800V CoolMOS™ P7
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
0,9 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
3.5V
Número de Elementos por Chip
1
Material del transistor
Si
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€ 0,49
Each (On a Reel of 2500) (Sin IVA)
2500
€ 0,49
Each (On a Reel of 2500) (Sin IVA)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
6 A
Tensión Máxima Drenador-Fuente
800 V
Serie
800V CoolMOS™ P7
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
0,9 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
3.5V
Número de Elementos por Chip
1
Material del transistor
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products