MOSFET Infineon IPD029N04NF2SATMA1, VDSS 40 V, ID 131 A, PG-TO252-3 de 3 pines, 2elementos
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
131 A
Tensión Máxima Drenador-Fuente
40 V
Tipo de Encapsulado
PG-TO252-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
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€ 0,892
Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
50
€ 0,892
Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
50
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Rollo |
|---|---|---|
| 50 - 120 | € 0,892 | € 4,46 |
| 125 - 245 | € 0,842 | € 4,21 |
| 250 - 495 | € 0,781 | € 3,91 |
| 500+ | € 0,40 | € 2,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
131 A
Tensión Máxima Drenador-Fuente
40 V
Tipo de Encapsulado
PG-TO252-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products